首都医科大学学报 ›› 1988, Vol. 9 ›› Issue (3): 159-163.

• 论著 • 上一篇    下一篇

培养脑细胞发育期的静息膜参数

王海薇1, 吕国蔚1, 张炳烈2, 李文彬2   

  1. 1. 首部医学院神经生物学研究室;2. 军事医科院基础医学研究所
  • 收稿日期:1988-03-01 修回日期:1900-01-01 出版日期:1988-07-15 发布日期:1988-07-15

Developmental Characteristics of Electrical Properties in Cultured Rat Brain Neurons

Wang Haiwei1, Lu Guowei1, Zhang Binlie2, Li Wenbin2   

  1. 1. Department of Neurobiology, Capital Institute of Medicine;2. Academy of Military Medical Sciences
  • Received:1988-03-01 Revised:1900-01-01 Online:1988-07-15 Published:1988-07-15

摘要: 在大鼠胎脑细胞原代单层细胞培养的条件下,从发育早期开始,观察了神经元膜的电学参数的演变。发育Ⅰ、Ⅱ、Ⅲ和Ⅳ期脑细胞的静息膜电位的相对值分别为1、3.46、4.07和6.54;膜输入阻抗的相对值分别为1、1.48、2.53和4.56,Ⅱ、Ⅲ期电流电压关系在去极化方向上,呈指数曲线变化。自发动作电位的发生率随培龄增加;Ⅲ、Ⅳ期诱发动作电位振幅达最大值。结果提示:培养脑细胞的钾通道发育在Ⅰ、Ⅲ期较快,Ⅱ、Ⅳ期较缓,Ⅳ期末臻于成熟。

关键词: 培养神经元, 膜的静息参数, 钾通道

Abstract: The rat brain neurons taken from 15~17 days embryo were grown in dissociated cell culture and maintained in vitro for 3 weeks. The developmental process of the neurons was observed from early stage of development in terms of passive and active electrical properties. The neurons’ development could be morphological divided into stanes Ⅰ (from plating time to 6 days), Ⅱ(7~11 days), Ⅲ(12~21 days), and Ⅳ(21~22 days). The relative value of resting membrane potentials (RMP) for stages Ⅰ,Ⅱ ,Ⅲ , and Ⅳ was 1, 3.46, 4.07 and 6.54, respectively; the corresponding value of input resistances (Rin) was 1, 1.48, 2.53 and 4.56 respectively. The current-voltage curve in stages Ⅱ and Ⅲ was exponential in the direction of depolarization and the Rin’s change with time was nearly linear. Occurrence rate of spontaneous activitywas increased with prolongation of culture and the amplitude of evoked action potentials reached maximum during stages Ⅲ and Ⅳ. The results indicate that potassium ion channels develop slower in stages Ⅱ, faster in stagds Ⅰand Ⅲ and mature by the end of stage Ⅳ.

Key words: potassium channel, brain neuron, membrane resting parameters