Transcatheter closure of atrial septal abnormalities (PFO, ASD) in patients with ischemic stroke

doi:10.3969/j.issn.1006-7795.2016.01.010

Abstract

Abstract: Objective To evaluate effective transcatheter atrial septal abnormalities (patent foramen ovale, PFO or atrial septal defect, ASD) closure rate and outcome in patients with ischemic stroke. Methods Ischemic stroke patients who underwent transcatheter closure of atrial septal abnormalities at Beijing Tiantan Hospital between May 2015 and November 2015 were enrolled. Right-left shunts (RLS) were confirmed by contrast transcranial Doppler ultrasound, and PFO or ASD were detected by transesophageal echocardiograph before transcatheter closure. Success rate of device implantation, completed closure rate and complications were evaluated. Results Ten patients [(48±14) years, 8 male and 2 female, 8 PFO and 2 ASD] were included in the study. Before closure, severe RLSs were detected in all patients. PFO size was (1.7±0.3) mm and ASD size was 4.5 mm and 3.4 mm. The procedure of device placement was successful in all patients. The 18/25 mm of PFO occluders were implanted in 8 PFO patients. The 12 mm and 10 mm ASD occluders were implanted in 2 ASD patients. Moderate residual RLS was present in 1 patient after PFO closure, and thus completed closure rate was 90%. Neither occluder malposition and thrombus,nor neurological recurrences were observed at 1, 3, and 6 months. Conclusion Transcatheter PFO or ASD closure is an effective and safe procedure in patients with ischemic stroke and can decrease RLS. However, it is necessary to evaluate residual RLS in mid-and long-term follow-up.

Key words: ischemic stroke, patent foramen ovale, atrial septal defect, transcatheter closure

CLC Number:

R541.1

Fu Qiang, Zhao Min, Zhang Qian, Ding Zeyu, Du Lijuan, Wang Yilong, Qyu Hui, Dong Kehui, Chen Buxing, Wang Yongjun. Transcatheter closure of atrial septal abnormalities (PFO, ASD) in patients with ischemic stroke[J]. Journal of Capital Medical University, 2016, 37(1): 48-53.

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URL: https://journal03.magtech.org.cn/Jweb_sdykdxxb/EN/10.3969/j.issn.1006-7795.2016.01.010

https://journal03.magtech.org.cn/Jweb_sdykdxxb/EN/Y2016/V37/I1/48

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